M25P128-VMF6P DataSheet
DATASHEET
M25P128-VMF6P 描述
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175C
M25P128-VMF6P 特点
The device has a low 12µA quiescent supply current, which reduces to 2µA max in shutdown. It features ther- mal-shutdown protection and a logic-signal output pin (FAULT) that signals when there is an overcurrent or overtemperature condition.
M25P128-VMF6P 应用
Technical/Catalog InformationM25P128-VMF6PVendorNumonyx/ST MicroCategoryIntegrated Circuits (ICs) Memory Type