MSP430F1121AIPW DataSheet
DATASHEET
MSP430F1121AIPW 描述
Ro mismatch between A & B Change in |Vod| between 0 and 1 Change in Vos between 0 and 1 Output current C Driver shorted to ground Output current C Drivers shorted together Power-off output leakage Maximum Clock Rate Differential peak-to-peak Voltage Common Mode Voltage Maximum Clock Rate Maximum Clock Rate (SCLK, 1/tSCLK) Minimum pulse width high, tPWH Minimum pulse width low, tPWL Minimum SDIO and CSB to SCLK setup, tDS Minimum SCLK to SDIO hold, tDH Maximum SCLK to valid SDIO and SDO, tDV Minimum SCLK to invalid SDIO and SDO, tDNV
MSP430F1121AIPW 特点
The MSP430F1121AIPW combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
MSP430F1121AIPW 应用
Technical/Catalog InformationMSP430F1121AIPWVendorTexas InstrumentsCategoryIntegrated Circuits (ICs) Program Memory Size